Indium and gallium on Si(001): A closer look at the parallel dimer structure
Identifieur interne : 014189 ( Main/Repository ); précédent : 014188; suivant : 014190Indium and gallium on Si(001): A closer look at the parallel dimer structure
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Abstract
Indium and gallium have been shown to self-assemble on the surface of Si(001) into long single atom wide chains in a structure known as the parallel dimer structure. Previous theoretical studies of the similar Al/Si(001) system have calculated the energy of the structure, simulated scanning tunneling microscopy (STM) images, and proposed a nucleation mechanism for row growth. These proposals are compared with STM data for In and Ga.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Indium and gallium on Si(001): A closer look at the parallel dimer structure</title><author><name sortKey="Evans, M M R" uniqKey="Evans M">M. M. R. Evans</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455-0132</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Materials Science and Mechanics, Michigan State University, East Lansing, Michigan 48824</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Materials Science and Mechanics, Michigan State University, East Lansing</wicri:cityArea></affiliation></author><author><name sortKey="Nogami, J" uniqKey="Nogami J">J. Nogami</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455-0132</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0144802</idno><date when="1999-03-15">1999-03-15</date><idno type="stanalyst">PASCAL 99-0144802 AIP</idno><idno type="RBID">Pascal:99-0144802</idno><idno type="wicri:Area/Main/Corpus">015697</idno><idno type="wicri:Area/Main/Repository">014189</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter</title><title level="j" type="main">Physical review. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Elemental semiconductors</term><term>Experimental study</term><term>Gallium</term><term>Indium</term><term>Interface structure</term><term>Metallic thin films</term><term>STM</term><term>Semiconductor-metal boundaries</term><term>Silicon</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6116C</term><term>6835B</term><term>7320H</term><term>Etude expérimentale</term><term>Indium</term><term>Gallium</term><term>Silicium</term><term>Semiconducteur élémentaire</term><term>Interface métal semiconducteur</term><term>Structure interface</term><term>STM</term><term>Couche mince métallique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Indium and gallium have been shown to self-assemble on the surface of Si(001) into long single atom wide chains in a structure known as the parallel dimer structure. Previous theoretical studies of the similar Al/Si(001) system have calculated the energy of the structure, simulated scanning tunneling microscopy (STM) images, and proposed a nucleation mechanism for row growth. These proposals are compared with STM data for In and Ga.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter</s0></fA03><fA05><s2>59</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Indium and gallium on Si(001): A closer look at the parallel dimer structure</s1></fA08><fA11 i1="01" i2="1"><s1>EVANS (M. M. R.)</s1></fA11><fA11 i1="02" i2="1"><s1>NOGAMI (J.)</s1></fA11><fA14 i1="01"><s1>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455-0132</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Materials Science and Mechanics, Michigan State University, East Lansing, Michigan 48824</s1></fA14><fA20><s1>7644-7648</s1></fA20><fA21><s1>1999-03-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0144802</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Indium and gallium have been shown to self-assemble on the surface of Si(001) into long single atom wide chains in a structure known as the parallel dimer structure. Previous theoretical studies of the similar Al/Si(001) system have calculated the energy of the structure, simulated scanning tunneling microscopy (STM) images, and proposed a nucleation mechanism for row growth. These proposals are compared with STM data for In and Ga.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60A16C</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H35B</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C20H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6116C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6835B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7320H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium</s0><s2>NC</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium</s0><s2>NC</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Silicium</s0><s2>NC</s2></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Silicon</s0><s2>NC</s2></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur élémentaire</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Elemental semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Interface métal semiconducteur</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor-metal boundaries</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Structure interface</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Interface structure</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>STM</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>STM</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Couche mince métallique</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Metallic thin films</s0></fC03><fN21><s1>084</s1></fN21><fN47 i1="01" i2="1"><s0>9911M000371</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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